Semiconductor device

ABSTRACT

Condenser (114), coil (115) and thin-thickness integrated circuit (312) are placed between the upper cover sheet (117) and the lower cover sheet (118), and adhesive (119) is filled into the space among them, whereby a card is fabricated. Because condenser (114), coil (115) and thin-thickness integrated circuit (312) are extremely thin, the resulting semiconductor device is strong to bending and highly reliable at a low cost.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 08/930,083,filed Feb. 9, 1998, the entire disclosure of which is herebyincorporated by reference.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device; morespecifically, the present invention relates to a semiconductor deviceparticularly preferable for use in extremely thin, inexpensive IC cardswith high bending toughness, wireless multi-chip modules and mobilecommunication terminals.

BACKGROUND ART

As to IC cards, a card with the cross structure shown in FIG. 20 isdescribed in "Data Carrier, II", page 137 to 194, Japan Industrial PressCorporation, issued Mar. 15, 1991.

In the card, as apparently shown in FIG. 20, thick condenser chip 411mounted on board 410 is connected through bonding wire 416 to printedwiring board 412 and is then molded with resin 415, and the resultingwhole structure is incorporated into center core 413, of which the topand bottom are covered with over-sheet 409, 414.

Furthermore, Japanese Patent Laid-open No. Hei 3-87299 proposes an ICcard comprising a thin-thickness chip.

In the card of such conventional type having the structure shown in FIG.20, elements such as condenser chip 411 are so thick that these elementsare weak to stress of bending and are therefore readily broken,disadvantageously.

As to the card proposed by the Japanese Patent Laid-open No. Hei3-87299, as shown in FIG. 8, the surface and back face of the condenserchip 41 bonded to the thick board 42 are stressed by a stretch or pressoperation if the board is bent, so that larger stress is applied to thecondenser chip 41 (of a thickness of 200 μm). Therefore, the connectionbetween metallized pattern 43 and the condenser chip 41 connected to thepattern 43 fails; or the condenser chip 41 weak to mechanical stressbecause of the thin-thickness is readily broken through the stress.Hence, the reliability thereof is particularly low.

A card of such conventional structure using condenser chip 41 isfabricated by attaching condenser chip 41 onto thin card 42 readilybendable, followed by wire bonding, and therefore, the card is at lowreliability because condenser chip 41 is readily broken. Additionally,the number of the process steps for mounting is so large. Accordingly,it has been difficult to reduce the production cost.

DISCLOSURE OF THE INVENTION

It is an object of the present invention to overcome the problems of theprior art and provide a highly reliable, inexpensive semiconductordevice strong to bending, particularly a semiconductor device of athin-thickness type, having functions as IC card, multi-chip module ormobile communication terminal.

So as to attain the object, in accordance with the present invention, athin-thickness device or integrated circuit comprising a condenser ismounted on a flexible card board of the same size as that of a card, andthe thickness of the condenser, an integrated circuit or a coil and thethickness of the card provided with the condenser, the integratedcircuit or the coil are individually fixed at given dimensions.

More specifically, the thickness of the integrated circuit, thecondenser or the coil is defined as 110 μm or less, provided that thelower limits of the thickness of the card and the condenser are 50 μmand 0.1 μm, respectively.

By fixing the integrated circuit, the condenser or the coil at such thinthickness, the integrated circuit, the condenser or the coil gets strongto stress of bending. When these are connected to a thin board such asIC card with a flexible adhesive, a highly reliable IC card strong tostress of bending can be produced.

Preferably, the thickness of a semiconductor device, namely the card oncompletion, is 760 μm or less when the thickness of the integratedcircuit, the condenser or the coil is 110 μm or less.

Preferably, the thickness of a semiconductor device, namely the card oncompletion, is 500 μm or less, when the thickness of the integratedcircuit, the condenser or the coil is 19 μm or less. Additionally, thethickness of a semiconductor device, namely the card on completion, is250 μm or less, when the thickness of the integrated circuit, thecondenser or the coil is 4 μm or less.

Because the thin-thickness condenser attached on the card is thin, theboard and the condenser are now possibly wired by means of a conductivepaste. Accordingly, compared with conventional wire bonding by means ofgold wire, a flat IC card of thin thickness can be produced at a lowmaterial cost and at a large scale.

The structure comprising such a thin-thickness condenser can be appliedto the fabrication of not only IC card but also other devices of similarshapes and multi-chip mounting.

On the cross section of the card bent, stretch forces are induced on thesurface of the curved board, while shrink forces are induced on the backface. Because no shrinkage occurs then at the central part of the crosssection of the card under less stress, the stress to be loaded onto athin-thickness condenser chip can be released, if the condenser chip isplaced on the part.

It is needless to say that the condenser chip of a thin thickness isbetter. Extremely preferable outcome can be gained if the thickness is110 μm or less. If the card is thick, however, the stiffness of the cardenlarges the critical curvature ratio. Hence, the card is scarcely bent.Thus, the condenser chip may satisfactorily be thick at some extent.

If the card is of a thin thickness, on contrast, the card is readilybent. So as to release the stress of the condenser chip, the condenserchip should be thin. For preparing a condenser of a thin thickness, athinner thickness of the condenser requires more precise apparatuses forfabricating such condenser. Thus, as to how thin the condenser should befabricated, it should be assessed from both the standpoints ofeconomical efficiency and procurement of reliability.

A given correlation in thickness between the card and the condenser chipis present; by fixing both the card and the condenser chip at theaforementioned thickness, various cards strong to bending and highlyreliable can be produced at a low cost. It is needless to say that thisis the case with the thickness of the coil and the integrated circuitplaced internally in the card, other than the thickness of thecondenser.

The lowest thickness limits of the semiconductor device, namely the cardon completion, and the condenser, are 50 μm and 0.1 μm, respectively. Ifthe card thickness is smaller than 50 μm, the flexibility of the card isdistinctively reduced which causes difficulty in putting the card forpractical use; and it is also difficult to fabricate a condenser of athickness of 0.1 μm.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view explaining Example 1 of the presentinvention;

FIG. 2 is a cross sectional view explaining the Example 1 of the presentinvention;

FIG. 3 is a cross sectional view explaining the Example 1 of the presentinvention;

FIG. 4 is a plane view explaining the Example 1 of the presentinvention;

FIG. 5 is a cross sectional view explaining the Example 1 of the presentinvention;

FIG. 6 is a cross sectional view explaining Example 2 of the presentinvention;

FIG. 7 is a plane view explaining Example 3 of the present invention;

FIG. 8 is a cross sectional view explaining the problems of conventionalcards;

FIG. 9 is a cross sectional view explaining the Example 3 of the presentinvention;

FIG. 10 is a cross sectional view explaining the Example 3 of thepresent invention;

FIG. 11 is a cross sectional view explaining Example 4 of the presentinvention;

FIG. 12 is a cross sectional view explaining the Example 4 of thepresent invention;

FIG. 13 is an explanatory view of the Example 4 of the presentinvention;

FIG. 14 is an explanatory view of the Example 4 of the presentinvention;

FIG. 15 is an explanatory view of the Example 4 of the presentinvention;

FIG. 16 is a plane view explaining Example 5 of the present invention;

FIG. 17 is a plane view explaining Example 6 of the present invention;

FIG. 18 is a cross sectional view explaining Example 7 of the presentinvention;

FIG. 19 is a plane view explaining the Example 7 of the presentinvention;

FIG. 20 is across sectional view depicting one example of conventionalcards; and

FIG. 21 is a cross sectional view depicting one example of conventionalcards.

BEST MODE FOR CARRYING OUT THE INVENTION EXAMPLE 1

FIG. 1 is a cross sectional view explaining Example 1 of the presentinvention;

As shown in FIG. 1, thin-thickness condenser 303 and coil 305 are bondedonto the surface of card board 301 with conductive material film 302(Trade name; Anisolm, manufactured by Hitachi Chemicals, Co.).

Because the thickness of the thin-thickness condenser 303 is as thin asabout 1 to 10 μm, the condenser 303 can readily be bonded to the surfaceof the board 301 by using the conductive material film 301 in paste orink-like liquid because the difference in level between the surface ofthe board 301 and the condenser 303 bonded to the board 301 is so small.

Therefore, the optimum card shape can be formed owing to such flatconnection at an extremely low height. The conductive material film 302in paste is as thin as about 10 μm, with higher flexibility, so the filmis characteristically strong to bending and resistant to difference inthermal expansion coefficient.

The thin-thickness condenser chip 303 was formed as follows.

As shown in FIG. 2, firstly, lamination film 310 comprising an oxidefilm and a single crystal silicone film was formed on silicone board311, to fabricate SOI (silicone on insulator) wafer.

As shown in FIG. 3, then, condenser 303 comprising lower electrode 307,isolation film 308 and upper electrode 309 was fabricated on the mainsurface side of the SOI wafer by a well-known semiconductive process. Asthe lower electrode 307, use was made of thermally resistant titaniumand platinum; as the isolation film 308, use was made of a filmcomprising a material with a larger dielectric constant, such as PZT(solid solution of lead zirconia and lead titanate).

Subsequently, selective etching by means of an aqueous 40% KOH(potassium hydroxide) solution was done to remove the silicone board311, to subsequently fabricate the structure shown in FIG. 3. Becausethe oxide film formed on the silicone board 311 then functioned as astopper of etching, the lamination film 310 comprising the silicone filmand the oxide film could be left while the silicone board 311 wasselectively removed. Consequently, the condenser 303 comprising theelectrode 307, the isolation film 308 and the electrode 309 was formedon the thin lamination film 310, structurally.

By fabricating thin-thickness integrated circuit 312 and printed coil115 as a conductive pattern by a well-known process, card 113 of theplane structure shown in FIG. 4 was formed. As the conductive pattern,coil 115 formed by printing process was used in the present Example, buta coil formed by processes other than printing process may also be usedsatisfactorily.

The coil 115 generates a dielectric electromotive force on receivingelectromagnetic wave from outside, to supply energy to thin-thicknesscondenser 114. The coil 115 and the thin-thickness condenser 114 adheredhighly in packing density to the integrated circuit 310 with aconductive paste or an anisotropic conductive adhesive, so that the coil115 and the thin-thickness condenser 114 are electrically connectedtogether. The coil 115 also functions to transmit information datasupplied from the outside of card 113 to the thin-thickness condenser114 and to transform the data from the thin-thickness condenser 114 inelectromagnetic wave and transfer the wave outside the card 112. Acommunication card, contactless and highly reliable, can be produced byforming the card 112 of such a structure.

Because electrodes are placed on the surface of cards called as contacttype among conventional cards, contact-miss failure occurs or the cardsare weak to electrostatic force, disadvantageously. The presentinvention may satisfactorily be applicable to conventional contact-typecards.

Then, flexible adhesive 119 for example silicone was filled into thespace formed by the thin-thickness condenser 114, the integrated circuit312 and the coil 115 fabricated by printing process; additionally, theupper cover sheet 117 and the lower cover sheet 118 were fixed with theadhesive 119, to form a card of the cross structure shown in FIG. 5.

The adhesive 119 had double operation of adhesion and filling up; andthe thin-film condenser 114 and the like were enclosed and retainedwithin the soft gummous material, so any stress was hardly loaded ontothe surface of the condenser 114 and the like; and additionally, theresulting card was strong to bending.

Even if the card deforms when the card is attacked by shock pin-pointforce, the force from outside is released through the adhesive layer119, which prevents stress attack on the surface of the condenser 114.

EXAMPLE 2

In the present Example, an extremely thin-thickness condenser was placedon the neutral surface of cards. By putting the condenser between thetwo cards, a practically satisfactory bending toughness was procured inthis Example.

As apparently shown in FIG. 6, in the present Example, thin-thicknesselement 315 for example condenser chip and coil is fixed between theupper card board 317 and the lower card board 318 by means of adhesive314, and by individually arranging thin plates 313, 316 comprising aharder material than these card boards 317, 318 on these card boards,the element was reinforced.

The thin-thickness element 315 is at a thickness of 1 to 110 μm, whichis far thinner than the thickness of conventional elements, andtherefore, by arranging the thin-thickness element 315 on the neutralsurface, the element was reinforced by the thin plates 313, 316, wherebysatisfactory bending toughness was procured and the card surface couldbe prepared as flat.

EXAMPLE 3

Using FIG. 7 depicting plane placement, another example of the presentinvention to produce a card with better bending toughness thanconventional ones will be explained.

As apparently shown in FIG. 7, in the present Example, thin-thicknesselement 315 for example condenser chip and coil is placed inside circle321 with the diameter equal to the short side's length of card 319 andwith the center thereof placed at the center of the card. It wasobserved that the immunity to bending was thereby improved, and it wasfound that the resulting card could be used in a far more simple mannerthan conventional ones.

FIG. 9 depicts an example wherein a thin-thickness condenser was used asthe thin-thickness element 315 and the thin-thickness condenser 315 wasembedded at the center position 37 of card board 36.

When the card board 36 was bent, the surface and back face thereof wereboth stressed by a stretch or press operation. Because thethin-thickness condenser 315 was placed at the center position 37 of thecard board 36, the thin-thickness condenser 315 was never attacked bysuch stress. Thus, a highly reliable card strong to bending wasproduced.

So as to form a card of the structure shown in FIG. 9, firstly,thin-thickness condenser 315 is attached on the surface of card board39, as shown in FIG. 10. Then, second card board 36 of the samethickness as that of the card board 39 is attached onto thethin-thickness condenser 315, whereby the structure shown in FIG. 9 canbe formed readily. It is needless to say that the thin-thicknesscondenser 315 may be placed at a desirable position inside the circle321 shown in FIG. 7, in addition to the center position of the board 39.

EXAMPLE 4

FIG. 11 is a view explaining another example of the present invention,depicting the state of a card with a curvature due to bending stress.

Because thin-thickness condenser chip 104 is put between lower cardboard 103 and upper card board 101 along the center line 102a of thecross sections of the two boards, such structure is the last to beinfluenced by bending. Thus, the thin-thickness condenser chip 104 isnot stressed. When the card is bent, the thin-thickness condenser chip104 is also bent, but the stress then is extremely small because thethin-thickness condenser chip 104 is extremely thin.

FIG. 12 shows the case that condenser chip 104 is bent. When thecondenser chip 104 is bent, the surface stress ρ of the condenser chip104 is represented, as follows, according to Navier's theorem; ρ=E×t/R.As shown in FIG. 12, herein, E represents Young's modulus of thecondenser; R represents radius of curvature; and t represents 1/2 of thethickness of the condenser chip 104.

Because the surface of the condenser chip 104 comprises silicone oxide,E is equivalently equal to the Young's modulus of the silicone oxide.The above formula indicates that the surface stress of the condenserchip 104 is in proportion to the thickness of the condenser chip 104 butin reverse proportion to the radius of curvature R. When the surfacestress of the condenser chip 104 is larger than the mechanical toughnessof the condenser chip 104, the chip is broken through bending. Becausethe radius of curvature R is infinite in the absence of any bending, thesurface stress ρ is zero; when R gets smaller following the progress ofbending, the stress ρ gets larger, until the condenser chip 104 isbroken finally.

However, if the condenser chip 104 is thin, the surface stress ρ isreduced, even through bending with the same radius of curvature R, andtherefore, the condenser chip 104 can get sufficiently strong to bendingif the condenser chip 104 is made thinner within a range not exceedingthe limit against mechanical break.

If the condenser chip 104 is made so thin, however, the chip isdifficult to be handled. As shown in FIG. 11, thus, the thin-thicknesscondenser 104 is put between two card boards 102, 103 comprisingplastics, metal and the like, whereby the condenser is readily handled,involving the increase of the toughness. Then, most preferably, thethin-thickness condenser chip 104 is placed on neutral surface 102a ofcard 101. By such placement, the neutral surface of the thin-thicknesscondenser 104 agrees with the neutral surface 102a of the card 101 withzero stress even when the card is bent, so that the thin-thicknesscondenser chip 104 is possibly never broken even if the card 101 isbent, as in the case that only the thin-thickness condenser chip 104 issingly bent.

FIG. 13 shows the results of the determination of the dependency of thesurface stress of LSI on the ratio of the LSI thickness to the cardthickness, using as the parameter the card thickness. After placing thethin-thickness condenser on the neutral surface of the card board, thesurface stress of the thin-thickness condenser was determined,correspondingly to the ratio of the thickness of the thin-thicknesscondenser to the card thickness.

The LSI surface stress has a significant relation with the degree of thecurvature of the card; the degree of the curvature of the card varieslargely, depending on the thickness and materials of the card, and theforce loaded onto the card, and the position of the card. In the presentExample, an LSI chip was placed at the center position of the plane faceof the card; as the card material, vinyl chloride commonly used forgeneral magnetic cards and credit cards was used. Because PET materialis characteristically harder and is more scarcely bent than vinylchloride, the results recovered by using vinyl chloride are applicableto any card comprising other materials including PET.

The radius of curvature defining the degree of bending varies dependingon the bending moment loaded on the card. The bending moment was loadedonto the card, up to a limit above which the card is bent and foldedover. The radius of curvature at the center of a vinyl chloride card ofa thickness of 0.76 mm was 50 mm. Provided that the thickness of the LSIchip is the same as the thickness of the card, herein, the surfacestress of the LSI chip is calculated by the formula 8E12×0.38/50 (Pa),according to the aforementioned formula of stress, which is 600 MPa. TheYoung's modulus of glass cited from the Japanese Scientific Table wasused. Because the surface of the LSI chip is principally composed ofsilicone oxide film layer, it is assumed that the surface has the samephysical properties as those of glass.

The moment of inertia of the card is involved in the relation betweenthe radius of curvature and the thickness of the card. The radius ofcurvature R is represented by E×I/M, wherein E represents the Young'smodulus of the card; I represents the moment of inertia; and Mrepresents bending moment. Because the moment of inertia of the card isin proportion to the cube of the thickness of the card, the profilecurve of the radius of curvature, as shown in FIG. 15, is prepared. FIG.15 shows that the surface stress of the LSI chip is 2.5 GPa and 5.4 GPaat card thickness of 0.5 mm and 0.25 mm, respectively, provided that theratio of the thickness of the LSI chip to the card thickness is 1.0. Atthat state, the LSI chip is readily broken, but in accordance with thepresent invention, the LSI chip fabricated thin is put between theneutral surfaces of the cards. Therefore, such break can be prevented.

Using the ratio of the thickness of the LSI chip to the card thicknessas a parameter, the surface stress of the resulting condenser of thinthickness was measured. The results are shown in FIG. 13. An enlargedview of a part of FIG. 13 is shown in FIG. 14, wherein the ratio of thethickness of the LSI chip to the card thickness is 0 to 0.16.

In FIG. 14, the stress of the LSI chip durable of bending is 90 MPa, andthe value is cited from the Japanese Scientific Table, provided that thebreak strength of the LSI chip is assumed to be equal to the breakstrength of glass. Thus, the necessary thickness of the LSI chip and thelowest thickness limit of the LSI chip at various dimensions of cardthickness can be determined in FIG. 14. More specifically, any break ofthe LSI chip due to card bending absolutely never occurs, provided thatthe thickness of the LSI chip is 110 μm or less at the card thickness of0.76 mm; that the thickness of the LSI chip is 19 μm or less at the cardthickness of 0.5 mm; and that the thickness of the LSI chip is 4 μm orless at the card thickness of 0.25 mm.

It is needless to say that the reliability of the LSI chip is so muchimproved when the thickness of the LSI chip is as thin as the lowestlimit, but the limit of the thickness of the chip to be possiblyfabricated is almost 0.1 μm. The fabrication of any LSI chip thinnerthan the limit is difficult.

The LSI chip and the thin-thickness condenser are most preferably placedin such a manner that the neutral surfaces of the LSI chip and thethin-thickness condenser might agree with the neutral surface of thecard. However, the upper or lower faces of the LSI chip and thethin-thickness condenser are satisfactorily placed within the upper orlower faces of an LSI chip and a thin-thickness condenser beingindividually of the lowest thickness limits defined by the cardthickness and being placed on the neutral surface of the card.

More specifically, the upper or lower face of the thin-thicknessintegrated circuit, the thin-thickness condenser or the coil issatisfactorily positioned within 55 μm above or below the neutralsurface of the card provided that the thickness of the card oncompletion is 760 μm or less, or within 9.5 μm above or below theneutral surface of the card provided that the thickness of the card oncompletion is 500 μm or less, or within 2 μm above or below the neutralsurface of the card provided that the thickness of the card oncompletion is 250 μm or less.

EXAMPLE 5

FIG. 16 shows another example of the present invention.

Thin-thickness condenser may possibly be provided with various controlfunctions. More specifically, as described above, SOI wafer and thewell-known semiconductive process are used to fabricate circuit devicepart 323 and condenser part 324 in an adjacent fashion to each other, inthin-thickness condenser 322, whereby various controls can be includedin one chip and high performance and low cost can be established. Forexample, the circuit device part 323 can be utilized for data storage inwireless cards.

EXAMPLE 6

FIG. 17 depicts another example of the present invention. In accordancewith the present invention, thin-thickness elements such as condenserchip are put between two card boards to fabricate a card, and therefore,the card surface is very flat. A card comprising conventional thickelements is weak to bending, on the surface of which difference in levelup to 150 μm may be formed, so that it is difficult to make the cardflat until the difference is reduced to 30 μm, which is essential forpressure-sensitive printing process. So as to make the surface flat, thestructure should be so highly precise that the cost therefor iseventually escalated.

In accordance with the present invention, however, various elements suchas condenser chip are extremely thin and the surface is flat, asdescribed above. As shown in FIG. 17, therefore, thin-thickness element326 can be placed below picture 327, in the present Example, whereby thedegree of freedom is improved.

EXAMPLE 7

FIG. 18 shows the cross structure of a card, on the surface of whichprinting is effected; printing material 328 is placed so that thematerial might be hung or held over thin-thickness element 332. In thestructure, the thin-thickness element 332 is so thin and embedded inadhesive 331, and the upper cover sheet 329 and lower cover sheet 330are bonded together with the adhesive 331. Thus, the surface turns flat.

Therefore, even when a printing roll reaches the top of the edge of thethin-thickness element 332, the pressure is dispersed, with nooccurrence of break of the thin-thickness element 332. Those to beprinted on the surface of the upper cover sheet 329 or lower cover sheet330 include for example a photograph of the face of a card holder. Inthis case, the part of the photograph is handled gently, so thethin-thickness element 332 can be placed at a desirable position, takingaccount of the use.

FIG. 19 is a view depicting the plane structure of the card shown inFIG. 18, wherein printing material 332 effects predetermined printingover the thin-thickness element 332 placed on the card 333.Conventionally, the thin-thickness element 332 has been brokenfrequently in such structure. In the present Example, however, thethin-thickness element 332 is so extremely thin as described above thatpredetermined printing could be effected with no concern of break. Acard of not a complex structure but a simple structure at highreliability could be produced.

As apparent in the description above, the following advantages can bebrought about in accordance with the present invention.

1. High reliability because of no concern of break due to bending.

2. Ready production at low cost because of the simple structure.

3. Because the condenser is extremely thin, the board and the condensercan be wired with a conductive paste, with the resulting lower cost andadditionally with the resulting flat surface.

4. An extremely thin-thickness condenser can be produced by the use ofSOI wafer, with lesser concern against break due to bending.

What is claimed is:
 1. An IC card comprising:a condenser chip having athickness not greater than 110 μm and including a circuit elementportion and a condenser portion; a coil having a thickness of 110 μm orless and providing energy to said condenser portion; and first andsecond flexible substrates interposing said condenser chip and coilbetween them, wherein a neutral plane of said IC card is positionedbetween upper and lower surfaces of said condenser chip.
 2. An IC cardaccording to claim 1,wherein said condenser chip is strengthened byusing a plate harder than said first and second substrates.
 3. An ICcard according to claim 1,wherein material of said first and secondflexible substrates is PET.
 4. An IC card according to claim 1,wherein aphotograph of a holder of said IC card is disposed over said condenserchip.
 5. An IC card according to claim 1,wherein said IC card includesplural integrated circuit chips.
 6. An IC card according to claim1,wherein said condenser chip includes a titanium oxide film as adielectric film of the condenser.
 7. An IC card according to claim1,wherein said condenser chip includes a titanium or platinum film as anelectrode of the condenser.
 8. An IC card according to claim 1,whereinsaid coil is printed.
 9. An IC card comprising:a condenser chip having athickness not greater than 110 μm and including a circuit elementportion and a condenser portion; first and second flexible substratesinterposing said condenser chip between them, and a thin plate harderthan said first and second flexible substrate, wherein a neutral planeof said IC card is positioned between upper and lower surfaces of saidcondenser chip.
 10. An IC card according to claim 9,wherein material ofsaid first and second flexible substrates is PET.
 11. An IC cardaccording to claim 9,wherein a photograph of a holder of said IC card isdisposed over said condenser chip.
 12. An IC card according to claim9,wherein said IC card includes plural integrated circuit chips.
 13. AnIC card according to claim 9,wherein said condenser chip includes atitanium oxide film as a dielectric film of the condenser.
 14. An ICcard according to claim 9,wherein said condenser chip includes atitanium or platinum film as an electrode of the condenser.
 15. An ICcard comprising:a condenser chip having a thickness not greater than 110μm and including a circuit element portion and a condenser portion;first and second flexible substrates interposing said condenser chipbetween them, and a photograph disposed over a portion of a surface ofat least one of said first and second flexible substrates, wherein saidportion is located at a position which corresponds to a position of saidcondenser chip, and wherein said condenser chip is disposed in said ICcord such that a neutral plane of said IC card is positioned betweenupper and lower surfaces of said condenser chip.
 16. An IC cardaccording to claim 15,wherein said condenser chip is strengthened byusing a plate harder than said first and second substrates.
 17. An ICcard according to claim 15,wherein material of said first and secondflexible substrates is PET.
 18. An IC card according to claim 15,whereinsaid photograph is a photograph of the holder of said IC card.
 19. An ICcard according to claim 15,wherein said IC card includes pluralintegrated circuit chips.
 20. An IC card according to claim 15,whereinsaid condenser chip includes a titanium oxide film as a dielectric filmof the condenser.
 21. An IC card according to claim 15,wherein saidcondenser chip includes a titanium or platinum film as an electrode ofthe condenser.